机译:单片集成常用于GaN电源装置,采用反平行横向肖特基屏障控制肖特基整流器
Chinese Acad Sci Dept Microwave Devices & Integrated Circuits Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Dept Microwave Devices & Integrated Circuits Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Dept Microwave Devices & Integrated Circuits Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Dept Microwave Devices & Integrated Circuits Inst Microelect Beijing 100029 Peoples R China;
Chinese Acad Sci Inst Microelect Beijing 100029 Peoples R China;
Enhancement-mode metal-insulator-semiconductor high-electron-mobility transistor (E-mode MIS-HEMT); GaN power device; reverse conduction; Schottky rectifier;
机译:用于单片集成的GaN-On-Si电源电路的快速切换三架子孔屏障二极管
机译:具有高RF / DC转换效率的无线高功率传输应用的横向GaN肖特基势态:从电路结构和设备技术到系统演示
机译:具有横向GaN肖特基二极管的5.8 GHz高功率和高效率整流器电路,用于无线功率传输
机译:无凹槽的AlGaN / GaN横向肖特基势垒控制肖特基整流器,具有低导通电压和高反向阻断
机译:4H碳化硅中的单片集成功率JFET和结势垒肖特基二极管。
机译:具有增强的横向肖特基势垒均质性的低功率石墨烯/ ZnO肖特基UV光电二极管
机译:用于单片集成的GaN-On-Si电源电路的快速切换三架子孔屏障二极管
机译:单片集成lnxGa1-xas肖特基势垒波导,光电探测器