-- Method for fabricating a semiconductor on insulator substrate with reduced SECCO defect density

摘要

The present invention is a semiconductor-on-insulator (semiconductor on insulator) relates to a substrate, specifically, a silicon-on-relates to a method for manufacturing an insulator (silicon on insulator) substrate, comprising: providing a source substrate, step by implanting atomic species (atomic species) inside the source substrate to provide the desired split (splitting) region; The source substrate to a handle substrate, preferably, attaching, by bonding; Comprising: by separating the excess portion (remainder) of the source substrate from the handle assembly, the transfer film onto the element substrate of the source handle substrate (transfer) - said source at a predetermined splitting area; And a device wherein the thin film step. On-semiconductor having a reduced SECCO defect density of 100 or less per to obtain the insulator substrate, the implantation is carried out with injection amount (dose) of less than the 2.3 10 ¹⁶ atoms per , the thickness includes the step of oxidation at a temperature below 925 .