Semiconductor component (100), comprising:a semiconductor body (40), comprising:– a vertical direction, which defines a first surface (101);– a drift region (4) is of a first conductivity type, which is under the first surface (101) is arranged and a first maximum dopant concentration; and– a semiconductor layer (7) from the first conductivity type with a to the first maximum dopant concentration lower, second maximum dopant concentration, wherein the semiconductor layer (7) to the drift region (4) and under the drift region (4) is arranged,the semiconductor body (40) in a vertical cross section, further comprising:– a first body region (5) of a second conductivity type, the to the drift region (4), wherein a source region (8) from the first conductivity type to the first body region (5) and between the first surface (101) and the first body region (5) is arranged;– a vertical trench (51) extending from said first surface (101) at least up to the semiconductor layer (7) extends, at the source region (8), the first body region (5) and the drift region (4) and an insulated gate electrode (2) comprises;– a first contact (10a) with a first smallest width (w1) at the first surface (101) and in a low-impedance contact with the source region (8) and the first body region (5);– a second body region (5) of the second conductivity type, the a pn - transition only with the drift region (4); and– a second contact (10b) in a low-impedance contact with the second body region (5) and with a on the first surface (101) second smallest width (w2), which is greater than the first smallest width (w1).
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