SEMICONDUCTOR DEVICE WITH TRIANGULAR STRUCTURE, INCLUDING A GATE ELECTRODE AND A CONTACT STRUCTURE FOR A DIODE FIELD

摘要

A semiconductor device (500) has trench structures (350) extending from a first surface (101) into a semiconductor body (100). The trench structures (350) each have a gate structure (150) and a contact structure (315) extending through the gate structure (150). Transistor mesas 170 are formed between the trench structures 350. Each transistor mesa (170) has a body zone (115) which forms a first pn junction (pn1) with a drift structure (120) and a second pn junction (pn2) with a source zone (110). Diode regions (116) each directly adjoin one of the contact structures (315) and form a third pn junction (pn3) with the drift structure (120).