Method for producing a bonded SiC wafer and bonded SiC wafer

摘要

There is provided a bonded SiC wafer (100) in which a device manufacturing process has a high degree of freedom and in which a leakage current after forming a device isolation region is low. The bonded SiC wafer (100) includes a supporting substrate (22), an insulating thin film (24) formed on the supporting substrate (22), and an active layer (12) formed on the insulating thin film (24). Both the carrier substrate (22) and the active layer (12) are formed by SiC layers. The bonded SiC wafer (100) has a diameter of 200 mm or more