SIC EPITAXIAL WAFER, APPARATUS FOR PRODUCING SIC EPITAXIAL WAFER, METHOD FOR PRODUCING SIC EPITAXIAL WAFER, AND SEMICONDUCTOR DEVICE

摘要

This SiC epitaxial wafer (1) is provided with a substrate (2) and an SiC epitaxial growth layer (3) that is arranged on the substrate (2). The SiC epitaxial growth layer (3) uses an Si compound as an Si supply source and a C compound as a C supply source, and the Si compound and/or the C compound uses a compound containing fluorine (F) as a supply source thereof. In this connection, the Si compound is generally represented by Si_nH_xCl_yF_z (wherein n ≥ 1, x ≥ 0, y ≥ 0, z ≥ 1, and x + y + z = 2n + 2) and the C compound is represented by C_mH_qCl_rF_s (wherein m ≥ 1, q ≥ 0, r ≥ 0, s ≥ 1 and q + r + s = 2m + 2). Provided are: a high quality SiC epitaxial wafer which has excellent film thickness uniformity and carrier concentration uniformity, while having less surface defects; an apparatus for producing an SiC epitaxial wafer; a method for producing an SiC epitaxial wafer; and a semiconductor device.