Preparation method of solar cell with stainless steel substrate of adjustable bandgap quantum well structure

摘要

The present invention belongs to the field of flexible solar cell manufacturing technology, in particular relates to a solar cell with a stainless steel substrate of an adjustable bandgap quantum well structure and a preparation method therefor. The solar cell of the present invention has a specific structure of Al electrode/GZO/P-type In x Ga 1-x N/I layer nc-Si:H intrinsic film/N-type nc-Si:H/GZO/Al back electrode/AIN insulating layer/flexible stainless steel substrate. The preparation method for the present invention comprises the steps of: firstly, preparing an AIN insulating layer and an Al back electrode by a magnetron sputtering method; then preparing a Ga-doped ZnO (GZO) transparent conductive film, an N-type hydrogenated nano-crystalline silicon (nc-Si:H) film, an I layer nc-Si:H intrinsic film, a P-type In x Ga 1-x N film and another GZO transparent conductive film in sequence by an Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PEMOCVD) system; and finally preparing an Al metal electrode. The solar cell with a stainless steel substrate of an adjustable bandgap quantum well structure has excellent flexibility and light weight, is easy to carry, and has industrial potential and market space. Besides, the preparation process of the solar cell of the present invention is simple, which enables the solar cell to be produced in large scale.