PbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) by sol-gel method. The PbTiO3 (PT) seed layer was depos-ited between the LNO buffer layer and stainless steel (SS) substrate, which effectively decreased the annealing temperature of LNO layer from 750 C to 650 C. X-ray diffraction (XRD) reveals that LNO layers with PT layer crystallize into a perovskite phase on annealing at 650 C for 10 min. PZT deposited on LNO buffer layer with PT seed layer exhibits good ferroelectric property.
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机译:平成28年度论文赏受赏轮文:Effect of Si/Fe Composition, Substrate Temperature, and Substrate Orientation on the Structure and Magnetic Properties of Fe-Si Alloy Film