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首页> 外文期刊>International Journal of Electrochemical Science >CdSe/ZnS Quantum Dot (QD) Sensitized Solar Cell Utilizing a Multi-Walled Carbon Nanotube Photoanode on a Stainless Steel Substrate
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CdSe/ZnS Quantum Dot (QD) Sensitized Solar Cell Utilizing a Multi-Walled Carbon Nanotube Photoanode on a Stainless Steel Substrate

机译:CdSe / ZnS量子点(QD)敏化太阳能电池,在不锈钢基板上使用多壁碳纳米管光电阳极

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摘要

Multi-walled carbon nanotube (MWCNT) forests grown on a stainless steel substrate were used as a photoanode in CdSe/ZnS (core/shell) quantum dot (QD) sensitized solar cells (QDSSCs). QD-treated MWCNTs on the conductive metal stainless steel substrate showed a higher power conversion efficiency (PCE) of 0.015% than those grown on a doped silicon substrate with a PCE of 0.005% under AM 1.5 sunlight intensity (100 mW/cm2). This higher efficiency can be attributed to the lower sheet resistance of 0.0045 Ω/sq for the metal substrate than that for doped silicon of 259 Ω/sq. The relationship between the total reflectance of the as-prepared CNT photoanode and the PCE was investigated for CNTs of various heights and amounts of QDs. A QDSSC fabricated using a CNT photo anode with a height of 25 μm showed the highest efficiency of 0.014%, while a pristine CNT forest showed the lowest total reflectance of 1.9%, which indicates a higher surface area of CNTs and a larger amount of QDs. The as-grown 25-μm CNTs treated with QDs containing in a toluene solution of 25-μL of exhibited the highest PCE of 0.015%, due to the larger surface area of the CNTs and the higher light absorption from the large amount of QDs on the CNTs.
机译:在不锈钢基板上生长的多壁碳纳米管(MWCNT)林用作CdSe / ZnS(核/壳)量子点(QD)敏化太阳能电池(QDSSC)中的光阳极。在AM 1.5阳光强度(100 mW / cm2)下,导电金属不锈钢基板上经QD处理的MWCNTs的功率转换效率(PCE)高于在PCE为0.005%的掺杂硅基板上生长的功率转换效率(PCE)为0.015%。这种较高的效率归因于金属衬底的薄层电阻为0.0045Ω/ sq,而掺杂硅的薄层电阻为259Ω/ sq。对于各种高度和QD量的CNT,研究了制备的CNT光阳极与PCE的全反射率之间的关系。使用高度为25μm的CNT光阳极制造的QDSSC的最高效率为0.014%,而原始CNT林的最低总反射率为1.9%,这表明CNT的表面积更大且QD量更大。用25μL甲苯溶液中的QD处理的成年25μmCNT表现出0.015%的最高PCE,这是因为CNT的表面积更大,且大量QD吸收了更高的光吸收碳纳米管。

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