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A bias-insensitive trigger circuit for bigfet esd supply protection

机译:偏置不敏感的触发电路,用于大ESD ESD电源保护

摘要

Embodiments of an electrostatic discharge (ESD) protection device and a method of operating an ESD protection device are described. In one embodiment, an ESD protection device for an integrated circuit (IC) device includes a bigFET configured to conduct an ESD current during an ESD event and a trigger device configured to trigger the bigFET during the ESD event. The trigger device includes a slew rate detector configured to detect the ESD event, a driver stage configured to drive the bigFET, and a keep-on latch configured to keep the driver stage turned on to drive a gate terminal of the bigFET with a driving voltage that is insensitive to a pre-bias on a drain terminal or a source terminal of the bigFET. Other embodiments are also described.
机译:描述了静电放电(ESD)保护装置的实施方式和操作ESD保护装置的方法。在一个实施例中,一种用于集成电路(IC)设备的ESD保护设备包括被配置为在ESD事件期间传导ESD电流的bigFET和被配置为在ESD事件期间触发bigFET的触发设备。触发装置包括配置为检测ESD事件的转换速率检测器,配置为驱动bigFET的驱动器级以及配置为保持驱动器级导通以利用驱动电压驱动bigFET的栅极端子的保持锁存器对bigFET的漏极端子或源极端子上的预偏置不敏感。还描述了其他实施例。

著录项

  • 公开/公告号EP2840608B1

    专利类型

  • 公开/公告日2017-08-30

    原文格式PDF

  • 申请/专利权人 NXP B.V.;

    申请/专利号EP20140173944

  • 申请日2014-06-25

  • 分类号H01L27/02;H03K19/003;H02H9/04;

  • 国家 EP

  • 入库时间 2022-08-21 14:06:23

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