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FINFET WITH BACKGATE, WITHOUT PUNCHTHROUGH, AND WITH REDUCED FIN HEIGHT VARIATION
FINFET WITH BACKGATE, WITHOUT PUNCHTHROUGH, AND WITH REDUCED FIN HEIGHT VARIATION
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机译:带有背栅,无充放电且鳍高度变化减小的FINFET
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摘要
A FinFET having a backgate and a barrier layer beneath the fin channel of the FinFET, where the barrier layer has a bandgap greater than that of the backgate. The barrier layer serves as an etch stop layer under the fin channel, resulting in reduced fin channel height variation. The backgate provides improved current control. There is less punchthrough due to the higher bandgap barrier layer. The FinFET may also include deeply embedded stressors adjacent to the source/drain diffusions through the high bandgap barrier layer.
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