METHOD FOR GROWING NIOBIUM OXYNITRIDE LAYER

摘要

PROBLEM TO BE SOLVED: To provide a method for growing a niobium oxynitride layer having a small carrier density.SOLUTION: The method for growing a niobium oxynitride layer is provided that comprises the following steps of: (a) growing a first niobium oxynitride film on a crystal titanium oxide substrate while the temperature of a crystal titanium oxide substrate is maintained at 600 degrees to 750 degrees in Celsius; and (b) growing a second niobium oxynitride nitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at 350 degrees or higher after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.SELECTED DRAWING: Figure 1