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METHOD FOR GROWING NIOBIUM OXYNITRIDE LAYER
METHOD FOR GROWING NIOBIUM OXYNITRIDE LAYER
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机译:铌氧氮化物层的生长方法
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摘要
To provide a method for growing a niobium oxynitride having small carrier density, the present invention is a method for growing a niobium oxynitride layer, the method comprising: (a) growing a first niobium oxynitride film on a crystalline titanium oxide substrate, while a temperature of the crystalline titanium oxide substrate is maintained at not less than 600 Celsius degrees and not more than 750 Celsius degrees; and (b) growing a second nitride oxynitride film on the first niobium oxynitride film, while the temperature of the crystalline titanium oxide substrate is maintained at not less than 350 Celsius degrees, after the step (a), wherein the niobium oxynitride layer comprises the first niobium oxynitride film and the second niobium oxynitride film.
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