FinFET with back gates, reduced punch height variation without punch through

摘要

A FinFET having a barrier layer under the back gate and FinFET channel of the FinFET, wherein the barrier layer has a larger band gap than that of the back gate. The barrier layer acts as an etch stop layer beneath the fin channel, resulting in a reduction in fin channel high variation. Backgate provides improved current control. Due to the barrier layer with a larger band gap, there is less punch through. The FinFET may also include a deeply buried stressor adjacent to the source / drain diffusion and through a large band gap barrier layer.