LASER ANNEALING METHOD, LASER ANNEALING APPARATUS, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide a laser annealing method capable of reducing a leakage current in a simple process.SOLUTION: The laser annealing method of irradiating an amorphous silicon thin film 7, deposited on a substrate (5), with laser light L to make it a polysilicon includes irradiating multiple times the amorphous silicon thin film 7 with the laser light L by changing irradiation areas to generate a particle size distribution in which polysilicon crystalline sizes become smaller from a center part to a side end part at least along a center line C of the irradiation area of the laser light L.SELECTED DRAWING: Figure 8