Laser annealing method, laser annealing apparatus and manufacturing method of thin film transistor

摘要

The present invention relates to a laser annealing method for forming an amorphous silicon thin film (7) deposited on a substrate (5) by irradiating laser light (L) onto the amorphous silicon thin film (7) The irradiation area is changed and multiple irradiation is performed to form a particle diameter distribution in which the diameter of the polysilicon crystal grain decreases from the center toward the front end along the center line C of the irradiation area of the laser light L at least. This makes it possible to realize a laser annealing method capable of reducing the leakage current by a simple process.