Etching liquid for aluminum oxide film and manufacturing method of thin film semiconductor device using the etching liquid

摘要

An etching solution includes: phosphoric acid having concentration of 30% by weight to 80% by weight; nitric acid having concentration of 10% by weight or less; and surfactant having concentration of 0.0005% by weight to 0.0050% by weight, wherein the etching solution is used for etching an aluminum oxide film having film density of 2.80 g/cm3 to 3.25 g/cm3.