ETCHING LIQUID FOR ALUMINUM-OXIDE FILMS AND THIN-FILM-SEMICONDUCTOR-DEVICE MANUFACTURING METHOD USING SAID ETCHING LIQUID

摘要

This etching liquid is specialized for etching aluminum-oxide films with densities between 2.80 g/cm³ and 3.25 g/cm³, inclusive. Said etching liquid is prepared so as to contain phosphoric acid in an amount between 30 wt.% and 80 wt.%, inclusive; at most 10 wt.% nitric acid; and a surfactant in an amount between 0.0005 wt.% and 0.0050 wt.%, inclusive.