Insulated gate type power semiconductor device gate drive circuit

摘要

The deterioration of the steady loss of the insulated gate power semiconductor element is prevented. The gate drive circuit (2) includes an NchMOSFET (4) for turning on the insulated gate power semiconductor element (1), a PchMOSFET (5) for turning off the insulated gate power semiconductor element (1), and a positive voltage (8b) is applied to the gate electrode of the NchMOSFET (4) to turn on the NchMOSFET (4), and a negative voltage (9) is applied to the gate electrode of the PchMOSFET (5) to apply the PchMOSFET (5). A negative voltage (9) is applied to the drain electrode of the PchMOSFET (5) and the negative electrode of the control circuit (6), and a positive voltage (8a) is applied to the NchMOSFET ( 4) than the absolute value of the positive voltage (8a) applied to the drain electrode of the Nch MOSFET (4). With power member to be applied to the positive side electrode of the control circuit positive voltage (8b) of the hearing absolute value (6) and (7).