首页> 外国专利> Film thickness monitoring device sensor, film thickness monitoring device including the same, and method for manufacturing film thickness monitoring device sensor

Film thickness monitoring device sensor, film thickness monitoring device including the same, and method for manufacturing film thickness monitoring device sensor

机译:膜厚监视装置传感器,包括该膜厚监视装置传感器的膜厚监视装置以及膜厚监视装置传感器的制造方法

摘要

The present invention provides a film thickness monitoring device sensor and a film thickness monitoring device using the same, which can improve the film thickness measurement accuracy with a simple configuration and realize a highly accurate film formation rate. A quartz crystal plate having a quartz crystal plate rotated by θ around the Z axis and rotated by φ around the X axis in the orthogonal coordinate system X-axis, Y-axis, and Z-axis, which are crystal crystal axes, and the temperature of the crystal resonator is 10 to 10. An SC-Cut crystal resonator having θ and φ with a frequency deviation at 170 ° C. of ± 20 ppm or less, and a sensor head that holds the crystal resonator and does not have cooling means for cooling the crystal resonator are provided. [Selection] Figure 3
机译:本发明提供了一种膜厚监测装置传感器和使用该膜厚监测装置传感器的膜厚监测装置,其能够以简单的构造提高膜厚测量精度并实现高精度的成膜率。一种石英板,具有在作为晶体轴的正交坐标系X轴,Y轴和Z轴上绕Z轴旋转了θ并绕X轴旋转了φ的石英板,以及晶体谐振器的温度为10到10。SC-Cut晶体谐振器,其θ和φ在170°C时的频率偏差为±20 ppm或更小,并且传感器头保持晶体谐振器并且没有冷却提供了用于冷却晶体谐振器的装置。 [选择]图3

著录项

  • 公开/公告号JPWO2016140321A1

    专利类型

  • 公开/公告日2017-04-27

    原文格式PDF

  • 申请/专利权人 株式会社アルバック;

    申请/专利号JP20160540712

  • 发明设计人 伊藤 敦;

    申请日2016-03-03

  • 分类号G01N5/02;C23C14/52;H03H9/19;H03H3/02;H01L41/187;H01L41/113;H01L41/25;

  • 国家 JP

  • 入库时间 2022-08-21 13:53:20

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号