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How incident electrons to calculate the scatter angle distribution scattered kinetically by the crystal, the apparatus and program

机译:入射电子如何通过晶体,装置和程序动力学地计算散射角分布

摘要

PROBLEM TO BE SOLVED: To provide a device capable of quantitatively calculating a scattering angle distribution of electron by a crystal easily with high accuracy.SOLUTION: The present invention includes: a thermal oscillation scattering layer Ts in which incident electrons are scattered by thermal oscillation of atoms forming a crystal; a storage part which stores crystal model M including a Bragg scattering layer Bs in which incident electrons are scattered based on the Bragg's law; and an operation part which dynamically calculates a scattering angle distribution in which the incident electrons are scattered by the crystal using the crystal model M stored in the storage part.
机译:解决的问题:提供一种能够容易且高精度地定量地计算出晶体的电子的散射角分布的装置。解决方案:本发明包括:热振荡散射层Ts,其中入射电子通过电子的热振荡而散射。原子形成晶体;存储部分,其存储晶体模型M,该晶体模型M包括布拉格散射层Bs,在该布拉格散射层Bs中,基于布拉格定律散射入射电子。运算部使用存储在存储部中的晶体模型M动态地计算入射电子被晶体散射的散射角分布。

著录项

  • 公开/公告号JP6031900B2

    专利类型

  • 公开/公告日2016-11-24

    原文格式PDF

  • 申请/专利权人 富士通株式会社;

    申请/专利号JP20120195153

  • 发明设计人 山▲崎▼ 貴司;

    申请日2012-09-05

  • 分类号G01N23/20;H01J37/26;H01J37/295;

  • 国家 JP

  • 入库时间 2022-08-21 13:53:17

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