首页> 外国专利> METHODS OF MODIFYING SURFACES OF STRUCTURES USED IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE VIA FLUORINATION

METHODS OF MODIFYING SURFACES OF STRUCTURES USED IN THE MANUFACTURE OF A SEMICONDUCTOR DEVICE VIA FLUORINATION

机译:通过氟化修饰半导体设备制造中使用的结构表面的方法

摘要

Methods are disclosed for modifying surfaces of a structure used in manufacturing semiconductor devices wherein the structures are formed from organic polymers. In addition to the surface of the structure, which is over a core, a portion of the structure slightly below the surface is also modified via fluorination of the organic polymer. The fluorination is achieved by exposing the structure to a mixture of gases including fluorine in a range from about 0.01% to about 10% and inert gas comprising a remainder of the mixture of gases. Fluorination occurs from the surface into the core to a depth of no more than about 1 micron and such that a portion of the core below more than 1 micron from the surface is not fluorinated.
机译:公开了用于修饰用于制造半导体器件的结构的表面的方法,其中所述结构由有机聚合物形成。除了位于芯上的结构的表面之外,还通过有机聚合物的氟化来修饰结构的在表面以下的一部分。通过将结构暴露于包含约0.01%至约10%范围内的氟的气体和包含其余气体混合物的惰性气体的混合物中来实现氟化。从表面到芯部的氟化发生到不大于约1微米的深度,并且使得从表面起大于1微米的芯部的一部分不被氟化。

著录项

  • 公开/公告号US2017137589A1

    专利类型

  • 公开/公告日2017-05-18

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US201615054122

  • 发明设计人 CESAR M. GARZA;SUNGIL AHN;

    申请日2016-02-25

  • 分类号C08J7/12;B01D67;H01L21/673;

  • 国家 US

  • 入库时间 2022-08-21 13:51:41

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号