Methods of modifying surfaces of structures used in the manufacture of a semiconductor device via fluorination

摘要

Disclosed are methods for modifying surfaces of structures used in manufacturing semiconductor devices, wherein the structures are formed from organic polymers. In addition to the surface above the center of the structure, a portion of the structure slightly below the surface is also modified through fluorination of the organic polymer. The fluorination is achieved by exposing the structure to a mixture of gases including fluorine in a range from about 0.01% to about 10% and inert gas comprising a remainder of the mixture of gases. Fluorination occurs from the surface into the center to a depth of no more than about 1 micron, such that a portion of the center below more than 1 micron from the surface is not fluorinated.