MAGNETIC SIDEWALLS FOR WRITE LINES IN FIELD-INDUCED MRAM AND METHODS OF MANUFACTURING THEM

摘要

In one embodiment, there is provided a non-volatile magnetic memory cell. The non-volatile magnetic memory cell comprises a switchable magnetic element; and a word line and a bit line to energize the switchable magnetic element; wherein at least one of the word line and the bit line comprises a magnetic sidewall that is discontinuous.