Low Cost Writeable RFID Tag With MRAM Memory

摘要

This program's goal was to develop a writeable RFID tag using an integrated, permeable core coil as the inductor/antenna for communication and power transfer and MRAM as the low write energy, nonvolatile memory. In the final reporting period, wafer processing, to integrate magnetoresistive memory cells with associated electronics, was completed. Success with this integration would demonstrate the memory technology which was proposed for the RFID tag. The IC wafers containing the electronics were completed through metal 1 at the foundry, and subsequent deposition and pattering of magnetoresistive material and metal 2 were completed at Nonvolatile Electronics. Two lots of wafers were processed, and in both cases problems with the inter-metal dielectric, over metal 1, prevented successful completion and testing of the memory devices. Thus, the program finished with successful demonstration of the magnetic memory cell and completion of the RFID tag circuit design, but development of the integrated inductor/antenna and demonstration of an integrated magnetoresistive memory device were not able to be completed within the time and budget constraints of the program.