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NOVEL SOLUTION FOR EUV POWER INCREMENT AT WAFER LEVEL
NOVEL SOLUTION FOR EUV POWER INCREMENT AT WAFER LEVEL
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机译:晶圆级EUV功率增加的新解决方案
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摘要
The present disclosure relates to a photolithography radiation source having an angled primary laser, and an associated method of formation. In some embodiments, the photolithography radiation source has a fuel droplet generator that provides fuel droplets to a source vessel along a first trajectory. A primary laser is configured to generate a primary laser beam along a second trajectory that intersects the first trajectory. The primary laser beam is configured to ignite a plasma from the plurality of fuel droplets that emits radiation. A collector mirror is configured to focus the radiation to an exit aperture of the source vessel. The primary laser beam does not intersect the exit aperture.
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