首页> 外国专利> NOVEL SOLUTION FOR EUV POWER INCREMENT AT WAFER LEVEL

NOVEL SOLUTION FOR EUV POWER INCREMENT AT WAFER LEVEL

机译:晶圆级EUV功率增加的新解决方案

摘要

The present disclosure relates to a photolithography radiation source having an angled primary laser, and an associated method of formation. In some embodiments, the photolithography radiation source has a fuel droplet generator that provides fuel droplets to a source vessel along a first trajectory. A primary laser is configured to generate a primary laser beam along a second trajectory that intersects the first trajectory. The primary laser beam is configured to ignite a plasma from the plurality of fuel droplets that emits radiation. A collector mirror is configured to focus the radiation to an exit aperture of the source vessel. The primary laser beam does not intersect the exit aperture.
机译:本公开涉及具有成角度的初级激光器的光刻辐射源,以及相关的形成方法。在一些实施例中,光刻辐射源具有燃料滴产生器,该燃料滴产生器沿着第一轨迹将燃料滴提供给源容器。初级激光器被配置为沿着与第一轨迹相交的第二轨迹产生初级激光束。初级激光束配置成从发射辐射的多个燃料小滴中点燃等离子体。收集镜被配置为将辐射聚焦到源容器的出口孔。初级激光束不与出射孔相交。

著录项

  • 公开/公告号US2017019981A1

    专利类型

  • 公开/公告日2017-01-19

    原文格式PDF

  • 申请/专利权人 TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD.;

    申请/专利号US201615251609

  • 发明设计人 EN-CHAO SHEN;YIMING CHIU;

    申请日2016-08-30

  • 分类号H05G2/00;G03F7/20;H01S3/223;G02B19/00;G21K1/06;

  • 国家 US

  • 入库时间 2022-08-21 13:48:37

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