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Development of Novel High Density System Integration Solutions in FOWLP-Complex and Thin Wafer-Level SiP and Wafer-Level 3D Packages

机译:采用FOWLP复杂,薄晶圆级SiP和晶圆级3D封装的新型高密度系统集成解决方案的开发

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Expanding FOWLP (Fan-Out Wafer-Level Packaging) from mainly 2D single or multi die solutions to 3D stacked multi-die solutions with SMDs integration, is of crucial importance to meet the requirements arising from new markets such as IoT/IoE and Wearables. This drives the development of new capabilities and technology breakthroughs in the current FOWLP process. One of the most hailed capabilities of FOWLP is the heterogeneous high-density system integration in a package. Wafer Level System-in-Package (WLSiP) already integrates active dies, passive components and even already-packaged components, in a wide range of geometries and materials. Vertical interconnections enable FO-based WL3D solutions, thru Package-on-Package (PoP) assembly. The nature of FOWLP, being a substrate-less technology and using thin-film re-distribution layers, makes the package itself an active interposer. This concept allows very thin packages and PoP solutions, with excellent electrical and thermal behaviour compared to other packaging technologies. To accomplish the vertical package interconnect, or Thru Package Vias (TPV), required for package front to backside connections and 3D assembly, pre-formed vias solution was developed as the concept of choice at NANIUM for lower IO density and package body thickness from 200 to 400um. To allow the process on very thin Fan-Out wafers and, on the last stage, the double side RDL process to complete PoP solution, dedicated Temporary Wafer Bonding (TWB) and Debonding solution for FOWLP were developed and tested. This paper presents the approaches used to effectively enable FOWLP-based WLSIP and WL3D products: Pre-formed via solutions in three build-up options, from process development to reliability result, Wafer front-to-back RDL alignment solutions for high-accuracy 3D package, FOWLP TWB solution for WL3D/ PoP products, and stack-up/ stack-down solution for the final PoP implementation, when there is no space for additional die inside the WLSiP or due to the need to simplify routing complexity and reduce number of RDL's. Several demonstrators are built to demonstrate the above mentioned features, from a very thin, <;300μm body, 12×12mm2 WLSiP with double side RDL for stack-up PoP, to a WL3D solution for a stack-down PoP.
机译:将FOWLP(扇出晶圆级封装)从主要的2D单或多管芯解决方案扩展到具有SMD集成的3D堆叠多管芯解决方案,对于满足IoT / IoE和可穿戴设备等新市场提出的要求至关重要。这推动了当前FOWLP流程中新功能和技术突破的发展。 FOWLP最受赞誉的功能之一是封装中的异构高密度系统集成。晶圆级封装系统(WLSiP)已在各种几何形状和材料中集成了有源管芯,无源元件,甚至已经封装的元件。垂直互连通过逐个封装(PoP)组装实现基于FO的WL3D解决方案。 FOWLP的本质是一种无基板技术,它使用薄膜再分布层,从而使封装本身成为有源中介层。与其他封装技术相比,此概念允许使用非常薄的封装和PoP解决方案,并具有出色的电气和热性能。为了实现封装正面至背面连接和3D组装所需的垂直封装互连或Thru封装通孔(TPV),在NANIUM上开发了预成型通孔解决方案作为首选概念,以实现更低的IO密度和封装体厚度(从200降到200)到400um。为了允许在非常薄的扇出晶圆上进行该工艺,并在最后阶段完成了双面RDL工艺以完成PoP解决方案,开发并测试了专用于FOWLP的临时晶圆键合(TWB)和脱键解决方案。本文介绍了用于有效启用基于FOWLP的WLSIP和WL3D产品的方法:通过从过程开发到可靠性结果的三个构建选项中的解决方案预先形成,用于高精度3D的Wafer前后RDL对准解决方案封装,用于WL3D / PoP产品的FOWLP TWB解决方案以及用于最终PoP实施的上叠/下叠解决方案,这是因为WLSiP内没有多余的裸片空间,或者是由于需要简化布线复杂性并减少数量的原因。 RDL的。建造了多个演示器来演示上述功能,从非常薄的<;300μm主体,用于堆叠PoP的带有双面RDL的12×12mm2 WLSiP,到用于堆叠PoP的WL3D解决方案。

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