首页>
外国专利>
LOW TEMPERATURE CONFORMAL DEPOSITION OF SILICON NITRIDE ON HIGH ASPECT RATIO STRUCTURES
LOW TEMPERATURE CONFORMAL DEPOSITION OF SILICON NITRIDE ON HIGH ASPECT RATIO STRUCTURES
展开▼
机译:高纵横比结构上氮化硅的低温保形沉积
展开▼
页面导航
摘要
著录项
相似文献
摘要
Embodiments described herein generally relate to methods for forming a conformal silicon nitride layer at low temperatures. The conformal silicon nitride layer may be formed by pulsing a radio frequency (RF) power into a processing chamber while a gas mixture including trisilylamine is flowing into the processing chamber. Pulsed RF power increases the ratio of neutral to ionic species and activated species of trisilylamine have low sticking coefficients and greater surface migration. As a result, conformality of the deposited silicon nitride layer is improved.
展开▼