Low-temperature conformal deposition of silicon nitride on high aspect ratio structures

摘要

The embodiments described herein generally relate to methods for forming a conformal silicon nitride layer at low temperatures. The conformal silicon nitride layer may be formed by pulsing radio frequency (RF) power into the processing chamber while a gaseous mixture comprising trisilylamine is flowing into the processing chamber. The pulsed RF power increases the ratio of neutral counter ion species, and the activated species of trisilylamine has low tack coefficients and greater surface movement. As a result, the conformality of the deposited silicon nitride layer is improved.