STORAGE CAPACITOR, PIXEL UNIT AND METHOD FOR MANUFACTURING STORAGE CAPACITOR

摘要

The present invention discloses a storage capacitor. The storage capacitor includes a substrate, a first electrode formed on the substrate and changed from a first metal layer, a first insulating layer formed on the the substrate and the first electrode, a semiconductor layer formed on the first insulating layer, a second metal layer formed on the semiconductor layer, a second insulating layer formed on the first insulating layer, the semiconductor layer, and the second metal layer, and a pixel electrode formed on the second insulating layer and the second metal layer. The second insulating layer defines a contact window to expose the second metal layer. The pixel electrode contacts the second metal layer via the contact window.