首页> 外国专利> Memory test with in-line error correction code logic to test memory data and test the error correction code logic surrounding the memories

Memory test with in-line error correction code logic to test memory data and test the error correction code logic surrounding the memories

机译:带有在线纠错码逻辑的内存测试可测试内存数据并测试存储器周围的纠错码逻辑

摘要

Systems and methods are provided for reusing existing test structures and techniques used to test memory data to also test error correction code logic surrounding the memories. A method includes testing a memory of a computing system with an error code correction (ECC) logic block bypassed and a first data pattern applied. The method further includes testing the memory with the ECC logic block enabled and a second data pattern applied. The method also includes testing the memory with the ECC logic block enabled and the first data pattern applied.
机译:提供了用于重用用于测试存储器数据的现有测试结构和技术以还测试存储器周围的纠错码逻辑的系统和方法。一种方法包括在绕过错误代码校正(ECC)逻辑块并且应用第一数据模式的情况下测试计算系统的存储器。该方法还包括在启用了ECC逻辑块并且应用第二数据模式的情况下测试存储器。该方法还包括在启用了ECC逻辑块并且应用了第一数据模式的情况下测试存储器。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号