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Structure and method for a complimentary resistive switching random access memory for high density application
Structure and method for a complimentary resistive switching random access memory for high density application
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机译:用于高密度应用的互补电阻切换随机存取存储器的结构和方法
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摘要
The present disclosure provides a resistive random access memory (RRAM) structure. The RRAM structure includes a bottom electrode on a substrate; a resistive material layer on the bottom electrode, the resistive material layer including a defect engineering film; and a top electrode on the resistive material layer.
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