Low power switching of Si-doped Ta2O5 resistive random access memory for high density memory application

摘要

We report, for the first time, the resistive switching properties of Si-doped Ta2O5 grown by atomic layer deposition (ALD). The reduced switching current, improved on/off current ratio, and excellent endurance property are demonstrated in the Si-doped Ta2O5 resistive random access memory (ReRAM) devices of 50 nm tech node. The switching mechanism for the Si-doped Ta2O5 resistor is discussed. Si dopants enable switching layer to have conformal distribution of oxygen vacancy and easily form conductive filament. This leads to higher on/off current ratio at even low operation current of 5-10 mu A. Finally, one selector-one resistor (1S1R) ReRAM was developed for large cell array application. For the optimized 1S1R stack, 0.2 mu A of off current and 5.0 of on/off current ratio were successfully achieved at 10 mu A of low operation current. (C) 2016 The Japan Society of Applied Physics