首页> 外国专利> Transient voltage suppressor and ESD protection device and array thereof

Transient voltage suppressor and ESD protection device and array thereof

机译:瞬态电压抑制器和ESD保护装置及其阵列

摘要

Provided is a transient voltage suppressor including a substrate, a well region of a first conductivity type, a first doped region of a second conductivity type, and a second doped region of the second conductivity type. The substrate is electrically floating. The well region is located in the substrate. The first doped region is located in the well region to form a diode, and the first doped region is electrically connected to a first voltage. The second doped region is located in the well region, and the second doped region is electrically connected to a second voltage.
机译:提供了一种瞬态电压抑制器,其包括衬底,第一导电类型的阱区,第二导电类型的第一掺杂区和第二导电类型的第二掺杂区。基板是电浮动的。阱区位于衬底中。第一掺杂区位于阱区中以形成二极管,并且第一掺杂区电连接至第一电压。第二掺杂区位于阱区中,并且第二掺杂区电连接到第二电压。

著录项

  • 公开/公告号US9741708B2

    专利类型

  • 公开/公告日2017-08-22

    原文格式PDF

  • 申请/专利权人 UBIQ SEMICONDUCTOR CORP.;

    申请/专利号US201514751098

  • 发明设计人 CHAU-CHUN WEN;KEI-KANG HUNG;

    申请日2015-06-25

  • 分类号H01L27/02;H01L29/861;H01L29/06;H01L29/16;H01L29/20;

  • 国家 US

  • 入库时间 2022-08-21 13:45:15

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号