Fully-Depleted SOI MOSFET with U-Shaped Channel

摘要

One kind being used to form MOSFET device and is arranged to include: to provide a kind of SOI wafer; Device of that of formation dummy gate oxide and the logical partial SOI layer of pseudo- door as channel region; It is formed on the opposite side of the SOI of spacer and doped source/drain areas and applies dummy grid; Deposit gap filled media; Remove dummy gate/grid oxide; The thickness of soi layer of the removal dummy gate of recessed area exposure soi layer with forming the slot part that one or more U-shapeds extend by making soi layer is maintained at soi layer doped source/drain areas of the channel region less than thickness in spacer; U-channel with U-shaped replacement gate stack is formed, is formed in the adjacent layer in the regions SOI using light u-shaped channel and replaces gate stack by U-shaped.