Integrated circuit device having III-V compound semiconductor region comprising magnesium and N-type impurity and overlying III-V compound semiconductor layer formed without Cp2Mg precursor

摘要

A method includes epitaxially growing a first III-V compound semiconductor, wherein the first III-V compound semiconductor is of p-type. The first III-V compound semiconductor is grown using precursors including a first precursor comprising Cp2Mg, and a second precursor comprising a donor impurity. A second III-V compound semiconductor is grown overlying and contacting the first III-V compound semiconductor. The second III-V compound semiconductor is of n-type.