首页>
外国专利>
Memory devices and methods of operating the memory devices by programming normal cells after programming a first dummy cell
Memory devices and methods of operating the memory devices by programming normal cells after programming a first dummy cell
展开▼
机译:存储器设备和在对第一伪单元进行编程之后通过对普通单元进行编程来操作存储器设备的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of operating a memory device including a first memory block having a plurality cell strings is provided. Each of the plurality of cell strings includes a string selection transistor connected in series to a first dummy cell, a plurality of normal cells, a second dummy cell and a ground selection transistor. The method includes programming the first dummy cell, and programming the normal cells in at least one of the cell strings after the programming the first dummy cell. The normal cells are selected based on a first program command inputted to the memory device. The programming the first dummy cell is performed at least twice before the normal cells are programmed. A number of times of programming the first dummy cell is different according to a level of a voltage applied to the first dummy cell and a level of a voltage applied to the normal cells.
展开▼