机译:用于4位/单元局部陷印SONOS存储设备的改进的多级单元编程技术
College of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China,College of Electronic Science & Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China;
College of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;
College of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;
College of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;
College of Electronic Science & Engineering, Nanjing University, Nanjing 210093, China;
机译:STI边缘效应对局部电荷陷阱SONOS闪存单元中编程干扰的影响
机译:SONOS存储单元中编程电荷的时空特性:局部电子陷阱的影响
机译:NOR型纳米级SONOS存储设备中的8级3位单元编程技术
机译:新型操作方案可提高本地陷阱存储SONOS型闪存中的设备可靠性
机译:SONOS非易失性存储设备中的均匀和局部电荷陷阱。
机译:受控双极性电荷陷阱机制的非易失性多级数据存储存储设备
机译:基板偏置辅助2步脉冲规划的研究实现4位SONOS电荷捕获闪存