Nonvolatile memory device having variable resistance memory cells and a method of resetting by initially performing pre-read or strong set operation

摘要

A method of resetting a variable resistance memory cell in a nonvolatile memory device includes; programming the memory cell to a set state using a corresponding compliance current, and then programming the memory cell to a reset state by pre-reading the variable resistance memory cell to determine its resistance and resetting the memory cell using a variable reset voltage determined in response to the determined resistance.