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Magnetic tunnel junction patterning using low atomic weight ion sputtering
Magnetic tunnel junction patterning using low atomic weight ion sputtering
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机译:使用低原子量离子溅射的磁性隧道结图案
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摘要
A method of magnetic tunnel junction patterning for magnetoresistive random access memory devices using low atomic weight ion sputtering. The method includes: providing a magnetoresistive random access memory device including a hard mask metal, a MTJ element, and a semiconductor substrate, wherein the hard mask metal is disposed on the MTJ element and, wherein the MTJ element is disposed on the semiconductor substrate; and etching back the MTJ element into a plurality of MTJ element pillars using a low atomic weight ion sputtering. A magnetoresistive random access memory device using low atomic weight ion sputtering. The device includes: a semiconductor substrate; a plurality of MTJ element pillars disposed on the semiconductor substrate, wherein the plurality of MTJ element pillars is etched from a MTJ element using a low atomic weight ion sputtering; and a hard mask metal disposed on the MTJ element pillars.
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