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MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates
MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates
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机译:高度不匹配的III-V CMOS沟道材料在硅衬底上的MOCVD生长
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摘要
Embodiments of the present disclosure generally relate to a semiconductor device including layers of group III-V semiconductor materials. In one embodiment, the semiconductor device includes a phosphorous containing layer deposited on a silicon substrate, wherein a lattice mismatch between the phosphorous containing layer and the silicon substrate is less than 5%, a group III-V compound nucleation layer deposited on the phosphorous containing layer at a first temperature, the group III-V compound nucleation layer having a first thickness, a group III-V compound transition layer deposited on the group III-V compound nucleation layer at a second temperature higher than the first temperature, the group III-V compound transition layer having a second thickness larger than the first thickness, and the group III-V compound nucleation layer is different from the group III-V compound transition layer, and an active layer deposited on the group III-V compound transition layer.
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