QUANTUM-DOT SURFACE-PROCESSING METHOD FOR IMPARTING CHEMICAL RESISTANCE, AND QUANTUM DOTS PRODUCED THEREBY

摘要

The present invention relates to: a quantum-dot surface-processing method for imparting chemical resistance by subjecting metal ions present on the surface of quantum dots to a cation exchange reaction and thereby subjecting same to place exchange with metal ions of another type which were previously present on the outside of the quantum dots; and quantum dots produced by means of the method. The present invention is devised in such a way that an inorganic shell coating is constituted on the quantum dot surface in straightforward yet also stable fashion, and in such a way that external environmental effects are not experienced, and, as a result, in such a way that the invention has outstanding chemical resistance and heat resistance, and in such a way that an inorganic layer, that has the nature of a buffer formed on the outermost shell of the quantum dot, can have a thickness that does not affect the light-emitting properties.