首页> 外国专利> WAFER POLISHING METHOD, BACK PAD MANUFACTURING METHOD, BACK PAD, AND POLISHING HEAD PROVIDED WITH BACK PAD

WAFER POLISHING METHOD, BACK PAD MANUFACTURING METHOD, BACK PAD, AND POLISHING HEAD PROVIDED WITH BACK PAD

机译:晶片抛光方法,后垫制造方法,后垫以及具有后垫的抛光头

摘要

The present invention is a wafer polishing method wherein the rear surface of a wafer is held by a polishing head via a back pad adhered to the polishing head, and the front surface of the wafer is polished by having the front surface in slidably contact with a polishing cloth adhered on a surface plate. As the back pad, a pad, which has a base material layer adhered to the polishing head, and a nap layer that holds the rear surface of the wafer by being in contact with the rear surface, is used, said base material layer being formed of a glass epoxy resin or a cellulose resin. Consequently, provided is the wafer polishing method whereby, without making the thickness of the back pad of the polishing head excessively large, load can be uniformly applied to the wafer by suppressing warping of the back pad, and as a result, the wafer having high planarity can be obtained.
机译:本发明是一种晶片抛光方法,其中晶片的后表面通过粘附到抛光头的背垫由抛光头保持,并且通过使晶片的前表面与晶片滑动接触而抛光晶片的前表面。抛光布粘附在面板上。作为背垫,使用具有粘附到抛光头上的基础材料层和通过与后表面接触而保持晶片的后表面的绒毛层的垫,形成所述基础材料层。玻璃环氧树脂或纤维素树脂。因此,提供了一种晶片抛光方法,其中,在不使抛光头的背面垫的厚度过大的情况下,通过抑制背面垫的翘曲,可以将载荷均匀地施加到晶片上,结果,晶片具有高的强度。可以获得平面度。

著录项

  • 公开/公告号WO2017125987A1

    专利类型

  • 公开/公告日2017-07-27

    原文格式PDF

  • 申请/专利权人 SHIN-ETSU HANDOTAI CO.LTD.;

    申请/专利号WO2016JP05223

  • 发明设计人 UENO JUNICHI;SATO MICHITO;ISHII KAORU;

    申请日2016-12-26

  • 分类号B24B37/30;H01L21/304;

  • 国家 WO

  • 入库时间 2022-08-21 13:30:19

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