PLASMA ETCHING RESISTANT CERAMIC BODY AND MANUFACTURING METHOD THEREOF, AND PLASMA ETCHING DEVICE

摘要

The plasma etching resistant ceramic body is obtained by compression moulding aluminium oxide powder and then firing same, the aluminium oxide powder containing inavoidable impurities, and the mass content of said impurities being no greater than 0.001%. The plasma etching resistant ceramic body has high plasma etching resistance, the manufacturing method thereof ensuring that the prepared plasma etching resistant ceramic body has high plasma etching resistance, stable dimensions, and high density. An aluminium oxide ceramic component formed of the plasma etching resistant ceramic body is arranged in an etching cavity of the plasma etching device. Thus, the aluminium oxide ceramic component has high plasma etching resistance, such that the etched wafer yield is high, and the service life of the aluminium oxide ceramic component is effectively extended.