INTEGRATED CIRCUIT AND METHOD TO FORM FIELD EFFECT TRANSISTOR IN A BLOCK OF AN INTEGARATED CIRCUIT

摘要

An integrated circuit is provided. The integrated circuit includes at least one block which includes a first cell which includes a first field effect transistor formed with a first contacted poly pitch and a second cell which includes a second field effect transistor formed with a second contacted poly pitch. The first contacted poly pitch is larger than the second contacted poly pitch. Accordingly, the present invention can provide a power-performance-area-cost (PPAC) target.