BACK GATE FIELD-EFFECT TRANSISTOR BASED ON FRICTION AND CONTACT ELECTRIFICATION EFFECTS

摘要

The present invention provides a backgate field effect transistor with a frictional contact by its charging effect. The back gate field effect transistor comprises a conductive substrate (10); A conductive substrate (10) comprising: an insulating layer (20) formed on a front surface; A field effect transistor assembly (30) comprising a channel layer (31), a drain (32), a source (33) and a gate (34); And the gate 34 are formed on the underside of the movable friction layer 42 and the stationary friction layer 41 formed on the undersurface thereof and the movable friction layer 42 and the movable friction layer 42 provided in opposition to the static friction layer 41, Wherein the static friction layer (41) and the movable friction layer (42) are in different positions in the triboelectric series, and wherein the external force acts thereon The static friction layer 41 and the movable friction layer 42 can be repeatedly switched between the separated state and the contact state. The present invention uses a back-gate field-effect transistor as the gate signal, and the semiconductor can regulate and control the carrier-transfer characteristic, as the static potential generated by the frictional generator.;