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Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

机译：与微观弹性单晶场效应晶体管的接触电阻，栅极偏置依赖性场效应迁移率和短信效应的详细表征

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Colin Reese; Zhenan Bao;
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年度 2009
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1. Detailed Characterization Of Contact Resistance, Gate-bias-dependent Field-effect Mobility, And Short-channel Effects With Microscale Elastomeric Single-crystal Field-effect Transistors [J] . Colin Reese, Zhenan Bao Advanced materials for optics and electronics . 2009,第5期

机译：使用微尺度弹性单晶场效应晶体管的接触电阻，取决于栅极偏置的场效应迁移率和短沟道效应的详细表征
2. High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts [J] . Hsun-Jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, Nano letters . 2014,第6期

机译：高迁移率WSe2 p型和n型场效应晶体管与高掺杂石墨烯接触以实现低电阻接触
3. Contact Pressure Dependence of Carrier Mobility in Cleaved Tetracene Single-Crystal Field-Effect Transistors [J] . Tomoyuki NISIKAWA, Naoki MORIGUCHI, Takashi ANEZAKI, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第6A期

机译：裂隙式四晶单晶场效应晶体管中载流子迁移率的接触压力依赖性。
4. Contact-dependent susceptibility and immunity to short-channel effects in monolayer MoS2 field-effect transistors [C] . Gyuchull Han, Youngki Yoon IEEE International Conference on Nanotechnology . 2014

机译：单层MoS 2 场效应晶体管的接触依赖敏感性和抗短沟道效应的能力
5. Fabrication and analysis of a selectively contacted dual channel high-electron mobility field-effect transistor [D] . Khanna, Ravi 1992

机译：选择性接触双沟道高电子迁移率场效应晶体管的制作与分析
6. Mobility overestimation due to gated contacts in organic field-effect transistors [O] . Emily G. Bittle, James I. Basham, Thomas N. Jackson, -1

机译：由于有机场效应晶体管中的栅极接触而导致的迁移率高估
7. High Mobility WSe2 p- and n-Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts [O] . Hsun-jen Chuang, Xuebin Tan, Nirmal Jeevi Ghimire, 2015

机译：高迁移率Wse2 p型和n型场效应晶体管，由高掺杂石墨烯接触，用于低电阻触点

Detailed Characterization of Contact Resistance, Gate-Bias-Dependent Field-Effect Mobility, and Short-Channel Effects with Microscale Elastomeric Single-Crystal Field-Effect Transistors

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