首页>
外国专利>
BACK GATE FIELD-EFFECT TRANSISTOR BASED ON FRICTION AND CONTACT ELECTRIFICATION EFFECTS
BACK GATE FIELD-EFFECT TRANSISTOR BASED ON FRICTION AND CONTACT ELECTRIFICATION EFFECTS
展开▼
机译:基于摩擦和接触电化效应的后门场效应晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention provides a contact electrification effect-based back gate field-effect transistor. The back gate field-effect transistor includes: a conductive substrate; an insulating layer formed on a front face of the conductive substrate; a field-effect transistor assembly including: a channel layer, a drain and a source, and a gate; and a triboelectric nanogenerator assembly including: a static friction layer formed at a lower surface of the gate, a movable friction layer disposed opposite to the static friction layer and separated by a preset distance, and a second electro-conductive layer formed at an outside of the movable friction layer and being electrically connected to the source; wherein, the static friction layer and the movable friction layer are made of materials in different ratings in triboelectric series, and the static friction layer and the movable friction layer are switchable between a separated state and a contact state under the action of an external force. The present invention achieves regulation and control of carrier transport properties in semiconductors by using an electrostatic potential generated in a triboelectric nanogenerator as a gate signal of the back gate field-effect transistor.
展开▼