GALLIUM NITRIDE-BASED HIGH ELECTRON MOBILITY TRANSISTOR ELEMENT HAVING FILLING HOLE FORMED ON REAR SURFACE THEREOF, AND MANUFACTURING METHOD THEREOF

摘要

Provided are a gallium nitride-based high electron mobility transistor element having a filling hole formed on a rear surface thereof, and a manufacturing method thereof. The gallium nitride-based high electron mobility transistor element has a structure of forming a through-hole on a front surface, wherein the structure fills the through-hole passing through a lower part of a source electrode with a material having high thermal conductivity and capable of being plated.;COPYRIGHT KIPO 2017