SURFACE TREATMENT METHOD FOR SUBSTRATE, SUBSTRATE, METHOD FOR GROWING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM-NITRIDE-BASED COMPOUND SEMICONDUCTOR, LIGHT-EMITTING ELEMENT AND ELECTRONIC ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide surface treatment method by which, when a substrate made of biboride single crystal, such as ZrB₂, is heated to remove a natural oxide film, segregation of elements, such as, Zr due to removal of boron is suppressed to realize stable controlling so that the stoichiometric composition ratio of the surface of the substrate becomes that of the substrate itself.;SOLUTION: The method of surface treatment for a substrate includes a step 1, wherein a substrate made of biboride single crystal that is represented by chemical Formula XB₂ (X contains at least one kind from among Ti, Mg, Al, Hf, and Zr) and is placed in a heat treatment apparatus is heated to remove the natural oxide film on the surface of the substrate; and a step 2 wherein boron compound is supplied to the heat treatment apparatus and boron is replenished to a boron-deficient part on the surface of the substrate, while heating the substrate.;COPYRIGHT: (C)2008,JPO&INPIT